Zhengzhou Hengguang Electronic Technology Co., Ltd.

Short light-emitting diode LED, using gallium arsenide, gallium aluminum arsenide, and gallium phosphide and other materials, the internal structure of a PN junction, with one-way electrical conductivity. When the PN junction light-emitting diode forward voltage increases, PN junction barrier lowering, carrier diffusion is greater than drift movement, resulting in hole injection into the P region N area, N area of the electron injection into the P zone, This hole into each other after the encounter with the e-produce complex, composite most of the energy generated when the form of light, therefore light.